advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 60v single drive requirement r ds(on) 18m lower on-resistance i d 35a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice halogen-free product 1 ap9972gi-hf 201408123 parameter rating drain-source voltage 60 gate-source voltage + 25 continuous drain current, v gs @ 10v 35 continuous drain current, v gs @ 10v 22 pulsed drain current 1 120 total power dissipation 31.3 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.25 thermal data parameter storage temperature range g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, lo w on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for all commercial-industrial through hole applications. g d s to-220cfm(i) .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.06 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =23a - - 18 m ? v gs =4.5v, i d =12a - - 22 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =23a - 40 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =23a - 35 56 nc q gs gate-source charge v ds =48v - 9.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 20 - nc t d(on) turn-on delay time 2 v ds =30v - 12 - ns t r rise time i d =35a - 37 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 47 - ns t f fall time r d =0.86 -59- ns c iss input capacitance v gs =0v - 3160 5060 pf c oss output capacitance v ds =25v - 280 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf r g gate resistance f=1.0mhz - 1.6 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =23a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =23a, v gs =0 v , - 36 - ns q rr reverse recovery charge di/dt=100a/s - 45 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9972gi-hf .
ap9972gi-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 30 60 90 120 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 14 16 18 20 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =23a v g =10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.7 1.2 1.7 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 30 60 90 120 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v .
ap9972gi-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =38v v ds =48v i d =23a 0 20 40 60 80 100 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss .
ap9972gi-hf marking information 6 part numbe r date code (ywwsss) y ? last digit of the year ww ? week sss ? sequence 9972gi ywwsss meet rohs requirement for low voltage mosfet only package code .
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